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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1095
DESCRIPTION *With MT-200 package *Complement to type 2SC2565 *High breakdown voltage *High transition frequency APPLICATIONS *Power amplifier applications *Recommended for 100W high-fidelity audio frequency amplifer output stage
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
*
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -15 15 150 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-100mA; IB=0
B
2SA1095
MIN -160 -5
TYP.
MAX
UNIT V V
IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A
B
-2.0 -2.0 -50 -50 55 40 60 350 240
V V A A
IC=-5A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IE=0; VCB=-10V;f=1MHz
MHz pF
hFE classifications R 55-110 O 80-160 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1095
Fig.2 Outline dimensions
3


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